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MoS2/WS2 bilayer heterostructure based back-gated FET

Based on

1 Articles
2015 Most recent source

Composition

1

molybdenum sulfide-tungsten sulfide bilayer nanosheet

MoS2/WS2 bilayer heterostructure
Type Nano Material
Formula
Role channels
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
source-drain current dependent on bias voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. ORNVU4JGoubc96HMoR9q9
Product

MoS2/WS2 bilayer heterostructure based back-gated FET

Size: not specified

Medium/Support: none

References

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