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graphene-on-tungsten disulfide field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate/gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

tungsten(IV) sulfide

tungsten disulfide tungsten sulfide
Type Single Compound
Formula WS2
Role semiconductor layer
4

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
5

titanium

Type Single Compound
Formula Ti
Role source
6

gold

Type Single Compound
Formula Au
Role source
7

titanium

Type Single Compound
Formula Ti
Role drain
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
elastic scattering time

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tungsten(IV) sulfide
  • Si/SiO2
Product

graphene-on-tungsten disulfide field effect transistor

References

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