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9,10-thienylanthracene-benzothiadiazole composed copolymer-based field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily n-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

poly[(5,5'-(9,10-bis(5-(2-hexyldecyl)thiophene-2-yl)anthracene-2,6--diyl)(benzo[c][1,2,5]thiadiazole)]

PTADTBT
Type Polymer
Formula
Role active layer
4

trichloro(octadecyl)-silane

n-octadecyltrichlorosilane trichloro(octadecyl)silane octadecayltrichlorosilane octadecyl trichlorosilane octadecyltrichlorosilane trichlorooctadecylsilane octadecyltrchlorosilane C18-OTS ODTS OTCS OTS
Type Single Compound
Formula C18H37Cl3Si
Role dielectric layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-doped SiO2/Si
  • poly[(5,5'-(9,10-bis(5-(2-hexyldecyl)thiophene-2-yl)anthracene-2,6--diyl)(benzo[c][1,2,5]thiadiazole)]
  1. sFHvhDLVAoOd2JOdfev620rRXgvx
Product

9,10-thienylanthracene-benzothiadiazole composed copolymer-based field effect transistor

References

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