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field effect transistor based on ReS2 nanosheet

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layered ReS2 nanosheet

few-layered ReS2 NS
Type Nano Material
Formula
Role channels
4

Cr/Au film

Cr/Au
Type Nano Material
Formula
Role source
5

Cr/Au film

Cr/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
activation energy for electrical conduction

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/p-doped silicon
  • sulphur
  • rhenium(VI) oxide
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  2. XDwLUxhw3UApIGbG1ilo5mSgYSp1eEtpdxN6bP6ceHsoM6pLF4n1CUzsvmXACJ7puubw67J
  3. nUxtNP
Product

field effect transistor based on ReS2 nanosheet

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/p-doped silicon
  • sulphur
  • rhenium(VI) oxide
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  2. W5pgfmTOusXYFrdxbRLVwxY0IchrNT8WuxLenhKxAjLqRKQafGSxGW1PVI8U9tB1ymyeRgO
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Product

field effect transistor based on ReS2 nanosheet

References

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