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back-gated graphene Hall-bar FET device

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

graphene

Type Nano Material
Formula
Role semiconductor layer
4

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film chromium/gold Cr/Au bilayer Au/Cr bilayer gold surface Cr/Au layer Cr/Au film Cr-Au film Cr/Au
Type Nano Material
Formula
Role source
5

chromium/gold electrode material

Cr/Au electrode material gold/chromium bilayer chromium-gold layer chromium/gold film chromium-gold film chromium/gold Cr/Au bilayer Au/Cr bilayer gold surface Cr/Au layer Cr/Au film Cr-Au film Cr/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

back-gated graphene Hall-bar FET device

References

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