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bar-coated metal oxide thin film transistor device

Based on

1 Articles
2015 Most recent source

Composition

1

silica coated n-doped silicon film

n-Si/SiO2 film
Type Complex Compound
Formula
Role substrate
2

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role gate dielectrics
3

indium gallium zinc oxide

IGZO
Type Complex Compound
Formula
Role semiconductor layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium(III) nitrate nonahydrate
  1. 9jksl7uHGkZ8Uu2jv6RSagMLskf
Product

bar-coated metal oxide thin film transistor device

References

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