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gallium antimonide nanowire-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gallium antimonide nanowires

GaSb nanowires
Type Nano Material
Formula
Role channel layer
4

nickel

Type Single Compound
Formula Ni
Role drain
5

nickel

Type Single Compound
Formula Ni
Role source

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

gallium antimonide nanowire-based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
Product

gallium antimonide nanowire-based field-effect transistor

References

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