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bottom-side n-doped graphene field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-type Si

Type Complex Compound
Formula
Role substrate
2

amine-functionalized self-assembled monolayer-modified silica

3-aminopropyltriethoxysilane-modified silica NH2-SAM-modified SiO2 APTES-modified SiO2
Type
Formula
Role
3

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role channels
4

chromium

Type
Formula Cr
Role
5

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
  • 3-aminopropyltriethoxysilane
  1. fPh0kkC6aGdVBS
Product

bottom-side n-doped graphene field effect transistor

References

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