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Cl-doped few-layer molybdenum sulfide back-gate field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Cl-doped molybdenum sulfide film

Type Nano Material
Formula
Role channels
4

nickel

Type Single Compound
Formula Ni
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

Cl-doped few-layer molybdenum sulfide back-gate field-effect transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

Cl-doped few-layer molybdenum sulfide back-gate field-effect transistor

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

Cl-doped few-layer molybdenum sulfide back-gate field-effect transistor

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

Cl-doped few-layer molybdenum sulfide back-gate field-effect transistor

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

Cl-doped few-layer molybdenum sulfide back-gate field-effect transistor

References

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