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InGaN/GaN multiple quantum well light emitting diode

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

n-type gallium nitride

n-type GaN
Type
Formula
Role
3

In0.3Ga0.7N/GaN multiple quantum wells

In0.3Ga0.7N/GaN MQW
Type
Formula
Role
4

p-type gallium nitride

p-type GaN
Type
Formula
Role
5

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role transparent Ohmic contact
6

Ti/Al/Ni/Au

Type Complex Compound
Formula
Role electrodes
7

Ti/Al/Ni/Au

Type Complex Compound
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Source
external quantum efficiency

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Applications

Area Application Source
lighting devices

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

References

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