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poly(3-hexylthiophene)-carbon nanotubes composite bottom-gate and bottom-contact field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

n-doped Si n++ Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

nickel

Type Single Compound
Formula Ni
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

poly(3-hexylthiophene)-carbon nanotubes composite film

P3HT/CNT composite film
Type Nano Material
Formula
Role semiconductor layer

Properties

General physical and chemical properties

Property Value Source
contact resistance

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • nickel
  1. 9mcyXhh5KC9Biy8sTzE
Product

poly(3-hexylthiophene)-carbon nanotubes composite bottom-gate and bottom-contact field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • nickel
  1. H02cvm0fgmAOLFElh6J
Product

poly(3-hexylthiophene)-carbon nanotubes composite bottom-gate and bottom-contact field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • nickel
  1. OIiZAxv2eCGiJ0D7PxK
Product

poly(3-hexylthiophene)-carbon nanotubes composite bottom-gate and bottom-contact field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • nickel
  1. gk3N58pjtoogCpgB7WE
Product

poly(3-hexylthiophene)-carbon nanotubes composite bottom-gate and bottom-contact field-effect transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • nickel
  1. MPDIvL2wqG0fSpshCPJ
Product

poly(3-hexylthiophene)-carbon nanotubes composite bottom-gate and bottom-contact field-effect transistor

References

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