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gallium nitride-based light-emitting diode with zinc oxide nanorod arrays

Based on

1 Articles
2014 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role nucleation layer
3

gallium nitride

Type Single Compound
Formula GaN
Role barrier layer
4

n-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role layer
5

indium gallium nitride/gallium nitride multiple-quantum well

InGaN/GaN MQW
Type Nano Material
Formula
Role photoactive layer
6

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role layer
7

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role transparent conductive layer
8

chromium

Type Single Compound
Formula Cr
Role adhesion layer
9

gold

Type Single Compound
Formula Au
Role p-n-type electrode
10

zinc oxide nanorod arrays

ZnO nanorod arrays
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
effective refractive index

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethylindigane
  • trimethanidogallium
See all (4)
  1. JbBf9Aa112RVNYk4mPuvSVxRQwH
Product

gallium nitride-based light-emitting diode with zinc oxide nanorod arrays

References

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