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poly(3-hexylthiophene) bottom-gate and bottom-contact field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

n-doped Si n++ Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

nickel

Type Single Compound
Formula Ni
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

poly(3-hexylthiophene)

P3HT
Type Nano Material
Formula
Role semiconductor layer

Properties

General physical and chemical properties

Property Value Source
contact resistance

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • nickel
  1. nOHkj0JC2oA7EZRiBo4
Product

poly(3-hexylthiophene) bottom-gate and bottom-contact field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • nickel
  1. pxQnv2kd4LRo1Ow1Yme
Product

poly(3-hexylthiophene) bottom-gate and bottom-contact field-effect transistor

References

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