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carbon nanotube field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-type silicon

p-type Si p-Si
Type Complex Compound
Formula
Role source
2

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type
Formula SiN(x)
Role
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role drain
5

single-walled carbon nanotubes

SWCNT
Type Nano Material
Formula
Role semiconductor layer
6

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
7

titanium

Type Single Compound
Formula Ti
Role adhesion layer
8

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Source
band energy diagram dependent on drain voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • n-type silicon
  • silicon hydride
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  2. PMqPGRD4I
  3. sf8hvezQ8TLsTL7zVaD3XnBWEYONrqh
Product

carbon nanotube field-effect transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  • ammonia
  • silicon hydride
  1. N6FQ0vk4ORgO0
  2. JGN6NpjSL
  3. dObrrD9Jz6REKCTG7s15crbg59wEhmC
Product

carbon nanotube field-effect transistor

References

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