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top-side n-doped graphene field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-type Si

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

diethylenetriamine-doped graphene

bottom-side n-doped graphene DETA-doped graphene
Type Nano Material
Formula
Role channels
4

chromium

Type
Formula Cr
Role
5

gold

Type
Formula Au
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
Raman spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. nvx5hemOi4UrEkFtxKymgVrv
  2. RVH4b7gZwBMPSINMdwknX7
  3. yLTYBr
  4. SlUH2Zx
Product

top-side n-doped graphene field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. 7KqE2Qb4NwIsHIHfhxuOAAjk
  2. jZjjauITcTJeym5Ex2Q5pb
  3. HCFjaI
  4. pdmqWak
Product

top-side n-doped graphene field effect transistor

Size: not specified

Medium/Support: none

References

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