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back gated field effect transistor consisting of 1T MoS2 channel material

Based on

1 Articles
2015 Most recent source

Composition

1

silicon/SiO2 wafer

Type Complex Compound
Formula
Role gate
2

single-layer 2H MoS2 nanosheets

Type Nano Material
Formula
Role channel material
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silicon/SiO2 wafer
  1. ePav26n
  2. QmA61s
Product

back gated field effect transistor consisting of 1T MoS2 channel material

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  • sulphur
  • silicon/SiO2 wafer
  1. kdw7GnN
  2. AsL3OD
Product

back gated field effect transistor consisting of 1T MoS2 channel material

Size: not specified

Medium/Support: none

References

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