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thin-film transistor based on dicyanomethylene-substituted quinoidal dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

trichloro(octadecyl)-silane

n-octadecyltrichlorosilane trichloro(octadecyl)silane octadecayltrichlorosilane octadecyl trichlorosilane octadecyltrichlorosilane trichlorooctadecylsilane octadecyltrchlorosilane C18-OTS ODTS OTCS OTS
Type Single Compound
Formula C18H37Cl3Si
Role layer
4

dicyanomethylene-substituted quinoidal dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene film

QDTBDT-2C film
Type Nano Material
Formula
Role channels
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • trichloro(octadecyl)-silane
  • silica/silicon
Product

thin-film transistor based on dicyanomethylene-substituted quinoidal dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene

References

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