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single-walled carbon nanotube-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

p-doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

metallic single-walled carbon nanotubes

single-walled carbon nanotubes m-SWNT SWNT
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

palladium

Type Single Compound
Formula Pd
Role source
6

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

single-walled carbon nanotube-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Product

single-walled carbon nanotube-based field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Product

single-walled carbon nanotube-based field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Product

single-walled carbon nanotube-based field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Product

single-walled carbon nanotube-based field-effect transistor

Size: not specified

Medium/Support: none

References

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