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gallium telluride selenide-based p-n diode

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-doped silicon

n-type silicon n-type Si silicon n-Si
Type
Formula Si
Role
2

gallium selenide telluride

Type
Formula GaTe0.64Se0.36
Role
3

indium

Type Single Compound
Formula In
Role anode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-doped silicon
  1. VaoKJRyvsNw
Product

gallium telluride selenide-based p-n diode

Size: not specified

Medium/Support: none

References

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