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seven-layer MoTe2 field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

boron doped silicon

p-doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

titanium

Type
Formula Ti
Role
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

trilayered MoTe2 crystal flakes

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) telluride
  • Si/SiO2
  1. 331CO15sjXH
Product

seven-layer MoTe2 field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) telluride
  • Si/SiO2
  1. UM9YDvJvZ7f
Product

seven-layer MoTe2 field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) telluride
  • Si/SiO2
  1. I5gpnkQ89Mm
Product

seven-layer MoTe2 field-effect transistor

Size: not specified

Medium/Support: none

References

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