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InAs NW based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon/silica

Type Complex Compound
Formula
Role substrate
2

InAs nanowires

InAs NW
Type Nano Material
Formula
Role channel layer
3

nickel/gold

Type Complex Compound
Formula
Role electrodes
4

silicon nitride

Type Single Compound
Formula Si3N4
Role dielectric layer

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. tyGxRucp60CjItil
  2. YdYr8jRbti
Product

InAs NW based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  1. lODHUXogXvuKyEr4
  2. QPOzWxZl8K
Product

InAs NW based field-effect transistor

References

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