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InAs NW based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon/silica

Type Complex Compound
Formula
Role substrate
2

InAs nanowires

InAs NW
Type Nano Material
Formula
Role channel layer
3

nickel/gold

Type Complex Compound
Formula
Role electrodes
4

silicon nitride

Type Single Compound
Formula Si3N4
Role dielectric layer

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. brRRmTwJQbVH6e3g
  2. OCcXTyGnmz
Product

InAs NW based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  1. DFjvQEspsiOVpZgk
  2. 2jNxDGHI2W
Product

InAs NW based field-effect transistor

References

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