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HfOx-based filamentary resistive random-access memory

Based on

1 Articles
2015 Most recent source

Composition

1

oxide-covered p-type silicon

Type Complex Compound
Formula
Role substrate
2

Ti layer

Type Nano Material
Formula
Role electrodes
3

HfOx layer

Type Nano Material
Formula
Role active layer
4

Pt film deposited on SrTiO3(100)

Pt film deposited on STO(100) Pt(100)/SrTiO3(100) Pt(100)/STO(100) platinum film Pt layer
Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Source
Cole-Cole plot

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Applications

Area Application Source
electronics

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Characterization

Method Source
dielectric spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • oxide-covered p-type silicon
Product

HfOx-based filamentary resistive random-access memory

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • oxide-covered p-type silicon
Product

HfOx-based filamentary resistive random-access memory

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • oxide-covered p-type silicon
Product

HfOx-based filamentary resistive random-access memory

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • oxide-covered p-type silicon
Product

HfOx-based filamentary resistive random-access memory

References

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