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InAs quantum dot single electron transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role hyper-hemispherical lens
2

gallium arsenide

Type Single Compound
Formula GaAs
Role substrate
3

Si-doped GaAs

n-GaAs
Type Complex Compound
Formula
Role gate
4

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.30Ga0.70As
Role barrier layer
5

gallium arsenide

Type Single Compound
Formula GaAs
Role wetting layer
6

example of semiconductor nanoparticles

example of semiconductor quantum dots indium(III) arsenide quantum dots indium monoarsenide quantum dots indium arsenide quantum dots example of quantum dots InAs quantum dots InAs quantum dot example of QD InAs QD layer InAs QD
Type
Formula
Role
7

titanium

Type
Formula Ti
Role
8

gold

Type Single Compound
Formula Au
Role source
9

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Coulomb stability diagram

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • arsenic
  • gallium
Product

InAs quantum dot single electron transistor

Size: not specified

Medium/Support: none

References

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