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p+/i/n+-doped silicon nanowires-based feedback field-effect transistors

Based on

1 Articles
2015 Most recent source

Composition

1

polyethersulfone

PES
Type Polymer
Formula
Role substrate
2

p+-doped silicon nanowires

p+-doped silicon NW p+-doped Si NW p+-doped SiNW
Type Nano Material
Formula
Role channels
3

silicon nanowires

silicon NW Si NW SiNW
Type Nano Material
Formula
Role channels
4

n+-doped silicon nanowires

n+-doped silicon NW n+-doped Si NW n+-doped SiNW
Type Nano Material
Formula
Role channels
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
6

aluminium

aluminum
Type Single Compound
Formula Al
Role source
7

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role isolation layer
8

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain-source current dependent on drain-source voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon
Product

p+/i/n+-doped silicon nanowires-based feedback field-effect transistors

Size: not specified

Medium/Support: none

References

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