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metamaterial terahertz modulator with aluminium indium nitride/aluminium nitride/gallium nitride/aluminium nitride/gallium nitride double-channel heterostructure

Based on

1 Articles
2015 Most recent source

Composition

1

silicon carbide

carborundum
Type Single Compound
Formula SiC
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role channels
3

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role spacer
4

gallium nitride

Type Single Compound
Formula GaN
Role channels
5

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role spacer
6

aluminium indium nitride

indium aluminum nitride
Type Single Compound
Formula Al0.82In0.18N
Role barrier layer
7

nickel

Type Single Compound
Formula Ni
Role adhesion layer
8

gold

Type Single Compound
Formula Au
Role gate
9

titanium

Type Single Compound
Formula Ti
Role adhesion layer
10

aluminium

aluminum
Type Single Compound
Formula Al
Role Ohmic contacts
11

nickel

Type Single Compound
Formula Ni
Role adhesion layer
12

gold

Type Single Compound
Formula Au
Role source
13

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  • silicon carbide
Product

metamaterial terahertz modulator with aluminium indium nitride/aluminium nitride/gallium nitride/aluminium nitride/gallium nitride double-channel heterostructure

Size: not specified

Medium/Support: none

References

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