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poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]-thiophene-)-2-carboxylate-2-6-diyl)]:P(NDI2OD-T) copolymer-based organic field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectrics
3

poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]-thiophene-)-2-carboxylate-2-6-diyl)]:P(NDI2OD-T)

PTB7-Th:P(NDI2OD-T)
Type Complex Compound
Formula
Role n-channel
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
electron mobility

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Applications

Area Application Source
power generation

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped Si
  1. y1QXt5bW
Product

poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]-thiophene-)-2-carboxylate-2-6-diyl)]:P(NDI2OD-T) copolymer-based organic field-effect transistor

References

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