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complementary metal-oxide-semiconductor inverter

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role gate
2

poly-L-lysine-treated SiO2

Type Nano Material
Formula
Role gate dielectrics
3

single-walled carbon nanotube film

SWCNT film
Type Nano Material
Formula
Role conducting layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

palladium

Type Single Compound
Formula Pd
Role drain
6

palladium

Type Single Compound
Formula Pd
Role source
7

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type
Formula SiN(x)
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
output voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. rDTZuWQ
Product

complementary metal-oxide-semiconductor inverter

Size: not specified

Medium/Support: none

References

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