Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

back-gated carbon nanotubes cross-stacked array-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

single-walled carbon nanotubes

single walled carbon nanotubes single-wall carbon nanotubes SWCNT SWNT
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

palladium/gold bilayer

Pd/Au bilayer Pd/Au film
Type Nano Material
Formula
Role source
6

palladium/gold bilayer

Pd/Au bilayer Pd/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source

Full content is available to subscribers only

To view content please choose from the following:

Applications

Area Application Source

Full content is available to subscribers only

To view content please choose from the following:

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 1qH5cGqqTNym9JHJog5Jul3AVHdFbKFl6zFEeITYTET89lmdDK9Msp0ZNF9A7Vhw3DJ
Product

back-gated carbon nanotubes cross-stacked array-based field-effect transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial