Loading ...

back-gated carbon nanotubes cross-stacked array-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

single walled carbon nanotubes

single-walled carbon nanotubes single-wall carbon nanotubes SWCNT SWNT
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

palladium/gold bilayer

Pd/Au bilayer Pd/Au film
Type Nano Material
Formula
Role source
6

palladium/gold bilayer

Pd/Au bilayer Pd/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
breakdown current dependent on junction type

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. HT9kkCSZDuBrwzpDoSuARMNOjRRoJiyXW2mopSKP5lKiFjQfoMY2Es9IKCEaGnOcO1t
Product

back-gated carbon nanotubes cross-stacked array-based field-effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial