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core-shell GaAs nanowire tunnel diode

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped gallium arsenide

p-GaAs (111)B GaAs(Zn)
Type Complex Compound
Formula
Role bottom contact
2

GaAs NW

Type Nano Material
Formula
Role active layer
3

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula GaAs
Role spacer
4

p-doped gallium arsenide

p-GaAs
Type Complex Compound
Formula
Role p-type semiconducting layer
5

gold nanoparticles

Au nanoparticles Au NP
Type Nano Material
Formula
Role contacts
6

p+-doped gallium arsenide

p+-GaAs
Type Complex Compound
Formula
Role shell

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gold
  • p-doped gallium arsenide
  1. Zwh0aG
Product

core-shell GaAs nanowire tunnel diode

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gold
  • p-doped gallium arsenide
  1. L6Luj9
Product

core-shell GaAs nanowire tunnel diode

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gold
  • p-doped gallium arsenide
  1. 6UxnjK
Product

core-shell GaAs nanowire tunnel diode

Size: not specified

Medium/Support: none

References

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