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InAs-based electron gas structure

Based on

1 Articles
2015 Most recent source

Composition

1

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role substrate
2

indium aluminium arsenide

aluminium indium arsenide indium aluminum arsenide
Type Single Compound
Formula In0.52Al0.48As
Role buffer layer
3

n-doped indium aluminium arsenide

n+ In0.52Al0.48As
Type
Formula
Role
4

indium aluminium arsenide

aluminium indium arsenide indium aluminum arsenide
Type
Formula In0.52Al0.48As
Role
5

indium aluminium arsenide

indium gallium arsenide InGaAs
Type Single Compound
Formula In0.53Ga0.47As
Role barrier layer
6

indium arsenide quantum well

InAs quantum well InAs QW
Type
Formula
Role
7

indium aluminium arsenide

indium gallium arsenide InGaAs
Type Single Compound
Formula In0.53Ga0.47As
Role barrier layer
8

indium aluminium arsenide

aluminium indium arsenide indium aluminum arsenide
Type
Formula In0.52Al0.48As
Role
9

indium(III) arsenide

indium monoarsenide indium arsenide
Type
Formula InAs
Role
10

nickel-iron alloy

NiFe alloy permalloy Py
Type Single Compound
Formula Ni81Fe19
Role ferromagnetic electrode
11

dielectric material

Type Complex Compound
Formula
Role gate dielectrics
12

titanium

Type Single Compound
Formula Ti
Role adhesion layer
13

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

References

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