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few-layer WS2 field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

SiO2/Si

Type Nano Material
Formula
Role substrate
2

few-layer tungsten sulfide

few-layer WS2
Type Nano Material
Formula
Role semiconductor layer
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role gate
7

1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide/poly(ethylene glycol) diacrylate/2-hydroxy-2-methylpropiophenone mixture

[EMIM][TFSI]/PEG-DA/HOMPP mixture
Type Complex Compound
Formula
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

few-layer WS2 field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
Product

few-layer WS2 field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
Product

few-layer WS2 field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
Product

few-layer WS2 field-effect transistor

References

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