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4-nitrophenyl-functionalized graphene oxide-based n-type semiconductor organic field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS TMOS OTMS ODTS ODMS TMS OTS ODS
Type
Formula C18H37Si(OCH3)3
Role
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source
7

4-fluorophenyl-functionalized graphene oxide

4-fluorophenyl-functionalized GO
Type
Formula
Role
8

N,N'-dioctyl-3,4,9,10-perylenedicarboximide

PTCDI-C8
Type
Formula C40H42N2O4
Role

Properties

General physical and chemical properties

Property Value Source
drain current dependent on drain voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si wafer
  1. q54ZlHdM5CJjP4ci
  2. WTA7ZAP
Product

4-nitrophenyl-functionalized graphene oxide-based n-type semiconductor organic field-effect transistor

References

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