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FinFET

Based on

1 Articles
2015 Most recent source

Composition

1

p-type silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

silicon nanowires

silicon NW Si NW SiNW
Type
Formula
Role
4

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
amplification gain

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. fl8voHQHvFzhZ8m0O0jKCeVBceFcZslsppYdfcVgiF2UhhrFbTXEzN4QlUmOMD1qSDmZRpE6xnQEzK1zoAZuHqCcqd30A3wO4a79AFD
Product

FinFET

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. f6TWxABbXw3B3jiHoDEpqIfBRaVYf5GkUtMVr6E3ZGTO8ZzJneWqF6EUUFf4Fr6HqL5GnjcM86QKOjtCbnErJTBc9sqCZ8fwP5hT7Od
Product

FinFET

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. UTwEneSiihecn7ljP5xdWgybZycn6wERRgTgGkGUk8v6ry4Nzpw9dObfg3ELKtrnWMIzRT2a3h9puGEOLjIK9l4rBmRTIhNLDSXIILw
Product

FinFET

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. Fxz3ih19MPy2Rx9H9n2CO1bLjDr9VIkytjEKUPKQt8WkxfaWw2WhDjvLQ5mBxKjdUMRs2tPswzACm6czwPQrX5kJWnhThzgIgCtZuKO
Product

FinFET

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. 6fumVhK4a6wmVDa8UzRld5GARvU941rxmsJKeHOwNkcOB7BpT4P1IEjokI0aPiDYLo8NpCmmdedjYWEiO1rSXv7Uyae2tlFVGdNx7VZ
Product

FinFET

Size: not specified

Medium/Support: none

References

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