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partially-printed high-performance top-gate ambipolar SWCNT thin film transistors

Based on

1 Articles
2014 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate
2

gold

Type Single Compound
Formula Au
Role electrodes
3

semiconducting single-walled carbon nanotubes

single walled carbon nanotubes single-walled carbon nanotubes single-wall carbon nanotubes sc-SWCNT SW-CNT SWCNT SWNT
Type
Formula
Role
4

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type Single Compound
Formula HfO(x)
Role dielectric layer
5

silver

Type Single Compound
Formula Ag
Role top electrode

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gold
  • poly(ethylene terephthalate)
Product

partially-printed high-performance top-gate ambipolar SWCNT thin film transistors

Size: not specified

Medium/Support: none

References

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