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back-gated MoS2 field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

MoS2 nanoflakes

Type Nano Material
Formula
Role conducting channel
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on density of sulfur vacancies on channel surface

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/p+Si
  • molybdenum disulfide
Product

back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/p+Si
  • molybdenum disulfide
Product

back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/p+Si
  • molybdenum disulfide
Product

back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • SiO2/p+Si
  • molybdenum disulfide
Product

back-gated MoS2 field-effect transistor

Size: not specified

Medium/Support: none

References

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