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MoTe2 symmetric field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

4 layers of h-BN

Type Nano Material
Formula
Role back gate
2

molybdenum telluride thin film

monolayer MoTe2 thin film monolayer MoTe2
Type Nano Material
Formula
Role bottom layer
3

4 layers of h-BN

Type Nano Material
Formula
Role interlayer tunneling barrier
4

molybdenum telluride thin film

monolayer MoTe2 thin film monolayer MoTe2
Type Nano Material
Formula
Role top layer
5

4 layers of h-BN

Type Nano Material
Formula
Role upper gate

Properties

General physical and chemical properties

Property Value Source
band gap

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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