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phototransistor based on In2Se3 nanosheet

Based on

1 Articles
2014 Most recent source

Composition

1

p-type heavily doped silicon

p-type heavily doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium selenide nanosheet

In2Se3 nanosheet
Type Nano Material
Formula
Role semiconductor layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source

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Sensor properties

Type of sensor Sensor property Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. td4llOGDFYkGw1oMW
  2. L5xmfcD0yPr7NFy
Product

phototransistor based on In2Se3 nanosheet

References

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