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silicon tri-gate nanowire field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

silicon nanowires

Type Nano Material
Formula
Role channels
4

hafnium silicon oxynitride

Type Single Compound
Formula HfSiON
Role gate dielectrics
5

titanium nitride

Type Single Compound
Formula TiN
Role gate dielectrics
6

polycrystalline silicon

poly silicon poly-silicon polysilicon silicon poly-Si pc-Si p-Si Si
Type Single Compound
Formula Si
Role gate
7

silicon-rich nitride

silicon mononitride silicon nitride
Type Single Compound
Formula SiN
Role spacer
8

silicon

Type Single Compound
Formula Si
Role source contact
9

Ni/Pt electrode

Type Complex Compound
Formula
Role drain
10

Ni/Pt electrode

Type Complex Compound
Formula
Role source
11

silicon

Type Single Compound
Formula Si
Role drain contact

Properties

General physical and chemical properties

Property Value Source
average power dissipation

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon-on-insulator
Product

silicon tri-gate nanowire field-effect transistor

References

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