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single nanowire-based ferroelectric-complementary metal-oxide-semiconductor nonvolatile memory devices

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-type silicon nanowires

n-type Si nanowires n-type Si NW
Type
Formula
Role
4

Au/Ti

Type Nano Material
Formula
Role source
5

Au/Ti

Type Nano Material
Formula
Role drain
6

poly(vinylidene fluoride-trifluoroethylene)

P(VDF-TrFE)
Type Polymer
Formula
Role gate
7

Au/Ni

Type Nano Material
Formula
Role source
8

Au/Ni

Type Nano Material
Formula
Role drain
9

p-type silicon nanowires

p-type Si nanowires p-type Si NW
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
output voltage

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

References

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