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indium zinc gallium oxide-based thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

zinc, strontium-doped indium oxide

indium gallium zinc oxide IGZO
Type Nano Material
Formula
Role channel layer
4

tungsten

Type Single Compound
Formula W
Role drain
5

tungsten

Type Single Compound
Formula W
Role source

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc bis-methoxyethoxide
  • indium isopropoxide cluster
  1. RuEJ3JGh2lCiLie9T
Product

indium zinc gallium oxide-based thin film transistor

References

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