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partially-printed high-performance top-gate ambipolar SWCNT thin film transistors

Based on

1 Articles
2014 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate
2

HfOx thin film

Type Nano Material
Formula
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role electrodes
4

semiconducting single-walled carbon nanotubes

single-walled carbon nanotubes single walled carbon nanotubes single-wall carbon nanotubes sc-SWCNT SW-CNT SWCNT SWNT
Type
Formula
Role
5

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type Single Compound
Formula HfO(x)
Role dielectric layer
6

silver

Type Single Compound
Formula Ag
Role top electrode

Properties

General physical and chemical properties

Property Value Source
capacitance

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • hafnium sub-oxide
  • poly(ethylene terephthalate)
  1. TTg3P
Product

partially-printed high-performance top-gate ambipolar SWCNT thin film transistors

References

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