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germanium quantum dots-embedded metal-oxide-semiconductor diode

Based on

1 Articles
2014 Most recent source

Composition

1

aluminium

aluminum
Type Single Compound
Formula Al
Role back-gate electrode
2

Ge-QD/SiO2/Si3N4 heterostructure

Type Nano Material
Formula
Role gate dielectrics
3

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role top gate electrode
4

silicon

Type Single Compound
Formula Si
Role substrate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band energy diagram dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
waves sensor for near violet to near infrared radiation

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

germanium quantum dots-embedded metal-oxide-semiconductor diode

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

germanium quantum dots-embedded metal-oxide-semiconductor diode

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

germanium quantum dots-embedded metal-oxide-semiconductor diode

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

germanium quantum dots-embedded metal-oxide-semiconductor diode

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
Product

germanium quantum dots-embedded metal-oxide-semiconductor diode

Size: not specified

Medium/Support: none

References

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