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superconductor-semiconductor gallium arsenide/indium arsenide core/shell nanowire device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gallium arsenide/indium arsenide core/shell nanowires

GaAs/InAs core/shell nanowires
Type Nano Material
Formula
Role channels
4

niobium

Type Single Compound
Formula Nb
Role superconducting layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
differential resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

superconductor-semiconductor gallium arsenide/indium arsenide core/shell nanowire device

Size: not specified

Medium/Support: none

References

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