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silicon δ-doped gallium arsenide-aluminium gallium arsenide core-shell nanowire field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

gold

Type Single Compound
Formula Au
Role gate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

silicon δ-doped gallium arsenide-aluminium gallium arsenide core-shell nanowires

Si δ-doped GaAs-AlGaAs core-shell NWs
Type Nano Material
Formula
Role channels
4

AuGe

Type Complex Compound
Formula
Role layer
5

nickel

Type Single Compound
Formula Ni
Role layer
6

titanium

Type Single Compound
Formula Ti
Role adhesion layer
7

gold

Type Single Compound
Formula Au
Role drain
8

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Source
contact resistance dependent on temperature

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Applications

Area Application Source
tools/devices

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • gold
  • nickel
See all (5)
Product

silicon δ-doped gallium arsenide-aluminium gallium arsenide core-shell nanowire field-effect transistor

References

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