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metal-contacted gallium arsenide/indium arsenide core/shell nanowire device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gallium arsenide/indium arsenide core/shell nanowires

GaAs/InAs core/shell nanowires
Type Nano Material
Formula
Role channels
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Source
Fourier transforms of magnetoconductance oscillations

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

metal-contacted gallium arsenide/indium arsenide core/shell nanowire device

References

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