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resistance-switching random access memory cell

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium

Type
Formula Ti
Role
4

aluminium

aluminum
Type Single Compound
Formula Al
Role bottom electrode
5

Ti-doped amorphous AlOx

Type Complex Compound
Formula
Role interface layer
6

amorphous TiOx/rutile TiOx grain mixture

Type Nano Material
Formula
Role insulating layer
7

titanium nitride

Type Single Compound
Formula TiN
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier thermal activation energy

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

resistance-switching random access memory cell

Size: not specified

Medium/Support: none

References

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