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FinFET device on flexible silicon substrate

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon

Type
Formula Si
Role
3

buried oxide

BOX
Type
Formula
Role
4

titanium nitride

Type Single Compound
Formula TiN
Role gate
5

NiSi

Type Complex Compound
Formula
Role Ohmic contacts
6

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon on insulator
  1. ZlMaF3R1DVX947hsYJyv0dAduyqa
Product

FinFET device on flexible silicon substrate

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon on insulator
  1. 8CSWarzyeZmczWGQFfONxZNG2iF5
Product

FinFET device on flexible silicon substrate

References

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