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carbon nanotube field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

B-doped Si

p-Si
Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium

Type
Formula Ti
Role
4

palladium

Type Single Compound
Formula Pd
Role gate
5

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
6

(3-aminopropyl)trimethoxysilane moiety

(3-aminopropyl)trimethoxysilane moiety (3-aminopropyl)triethoxysilane moiety γ-aminopropyltriethoxy silane moiety 3-aminopropyltrimethoxysilane moiety γ-aminopropyltriethoxysilane moiety 3-aminopropyltriethoxysilane moiety (3-aminopropyl)trioxysilane moiety (3-aminopropyl)silanetrioxy group 3-aminopropylsilanetrioxy group 3-aminopropylsiloxy fragment 3-aminopropyl silane moiety 3-aminopropylsilane moiety γ-APTES moiety 3-APTS moiety APTES moiety APTMS moiety AMPS moiety APTS moiety APS moiety
Type
Formula -C3H8NO3Si-
Role
7

carbon nanotubes

CNT
Type
Formula
Role
8

palladium

Type Single Compound
Formula Pd
Role source
9

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
Product

carbon nanotube field-effect transistor

References

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