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N,N'-bis-(heptafluorobutyl)-2,6-dichloro-1,4,5,8-naphthalene tetracarboxylic diimide single-crystal field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily doped silicon

Type Complex Compound
Formula
Role gate
2

n-octadecyltriethoxysilane-modified silica

OTES-modified SiO2
Type Nano Material
Formula
Role gate dielectrics
3

N,N'-bis-(heptafluorobutyl)-2,6-dichloro-1,4,5,8-naphthalene tetracarboxylic diimide ribbon

Cl2-NDI ribbon
Type Nano Material
Formula
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility dependent on electrode deposition method

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • N,N'-bis-(heptafluorobutyl)-2,6-dichloro-1,4,5,8-naphthalene tetracarboxylic diimide
  1. ZKrkR7kRAQXClN3PxUD
  2. EiwLtRc7N957Sv2ZOAP7UPaEvjk8
Product

N,N'-bis-(heptafluorobutyl)-2,6-dichloro-1,4,5,8-naphthalene tetracarboxylic diimide single-crystal field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • N,N'-bis-(heptafluorobutyl)-2,6-dichloro-1,4,5,8-naphthalene tetracarboxylic diimide
  1. jY08cif1MlqS8BktBq4
  2. LVtM7Ms1KhSijHWQTs1hfEg918pL
Product

N,N'-bis-(heptafluorobutyl)-2,6-dichloro-1,4,5,8-naphthalene tetracarboxylic diimide single-crystal field-effect transistor

References

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