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ITO/ZnO/poly(5,10-bis(5-(2-ethylhexyl)thiophen-2-yl)naphtho[1,2-b:5,6-b']dithiophene-2,7- diyl)bis(trimethylstannane)-co-1,3-bis(5-bromo-4-decylthiophen-2-yl)-5-(2-octyldodecyl)-4H-thieno[3,4-c]pyrrole- 4,6(5H)-dione) copolymer:PC71BM/MoOx/Ag hole-only device

Based on

1 Articles
2014 Most recent source

Composition

1

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role transparent electrodes
2

zinc oxide

Type
Formula ZnO
Role
3

PC71BM-filled-poly(5,10-bis(5-(2-ethylhexyl)thiophen-2-yl)naphtho[1,2-b:5,6-b']dithiophene-2,7- diyl)bis(trimethylstannane)-co-1,3-bis(5-bromo-4-decylthiophen-2-yl)-5-(2-octyldodecyl)-4H-thieno[3,4-c]pyrrole- 4,6(5H)-dione) copolymer

Type Nano Material
Formula
Role semiconductor layer
4

Ag/MoOx material

Type Complex Compound
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Source
energy conversion efficiency

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Applications

Area Application Source
power generation

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tin-doped indium oxide
  • zinc oxide
Product

ITO/ZnO/poly(5,10-bis(5-(2-ethylhexyl)thiophen-2-yl)naphtho[1,2-b:5,6-b']dithiophene-2,7- diyl)bis(trimethylstannane)-co-1,3-bis(5-bromo-4-decylthiophen-2-yl)-5-(2-octyldodecyl)-4H-thieno[3,4-c]pyrrole- 4,6(5H)-dione) copolymer:PC71BM/MoOx/Ag hole-only device

Method 2

Type: Physical formation
Source:
Starting materials
  • tin-doped indium oxide
  • zinc oxide
Product

ITO/ZnO/poly(5,10-bis(5-(2-ethylhexyl)thiophen-2-yl)naphtho[1,2-b:5,6-b']dithiophene-2,7- diyl)bis(trimethylstannane)-co-1,3-bis(5-bromo-4-decylthiophen-2-yl)-5-(2-octyldodecyl)-4H-thieno[3,4-c]pyrrole- 4,6(5H)-dione) copolymer:PC71BM/MoOx/Ag hole-only device

Method 3

Type: Physical formation
Source:
Starting materials
  • tin-doped indium oxide
  • zinc oxide
Product

ITO/ZnO/poly(5,10-bis(5-(2-ethylhexyl)thiophen-2-yl)naphtho[1,2-b:5,6-b']dithiophene-2,7- diyl)bis(trimethylstannane)-co-1,3-bis(5-bromo-4-decylthiophen-2-yl)-5-(2-octyldodecyl)-4H-thieno[3,4-c]pyrrole- 4,6(5H)-dione) copolymer:PC71BM/MoOx/Ag hole-only device

Method 4

Type: Physical formation
Source:
Starting materials
  • tin-doped indium oxide
  • zinc oxide
Product

ITO/ZnO/poly(5,10-bis(5-(2-ethylhexyl)thiophen-2-yl)naphtho[1,2-b:5,6-b']dithiophene-2,7- diyl)bis(trimethylstannane)-co-1,3-bis(5-bromo-4-decylthiophen-2-yl)-5-(2-octyldodecyl)-4H-thieno[3,4-c]pyrrole- 4,6(5H)-dione) copolymer:PC71BM/MoOx/Ag hole-only device

Method 5

Type: Physical formation
Source:
Starting materials
  • tin-doped indium oxide
  • zinc oxide
Product

ITO/ZnO/poly(5,10-bis(5-(2-ethylhexyl)thiophen-2-yl)naphtho[1,2-b:5,6-b']dithiophene-2,7- diyl)bis(trimethylstannane)-co-1,3-bis(5-bromo-4-decylthiophen-2-yl)-5-(2-octyldodecyl)-4H-thieno[3,4-c]pyrrole- 4,6(5H)-dione) copolymer:PC71BM/MoOx/Ag hole-only device

References

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